- Gabatarwa zuwa Kwayoyin
(1) Bayani:Kwayoyin su ne ainihin abubuwan da ke cikisamar da wutar lantarki na photovoltaic, da kuma hanyar fasaha da matakan tsari kai tsaye suna shafar tasirin samar da wutar lantarki da rayuwar sabis na samfurori na hotovoltaic.Kwayoyin Photovoltaic suna cikin tsakiyar tsakiyar sarkar masana'antar hoto.Sune zanen gado na bakin ciki na semiconductor wanda zai iya canza hasken hasken rana zuwa makamashin lantarki wanda aka samu ta hanyar sarrafa wafers silicon guda/poly crystalline.
Ka'idar tasamar da wutar lantarki na photovoltaicya fito ne daga tasirin photoelectric na semiconductor.Ta hanyar haskakawa, ana haifar da yuwuwar bambance-bambance tsakanin sassa daban-daban na a cikin na'urori masu kama da juna ko kuma na'ura mai kwakwalwa hade da karafa.Ana juyar da shi daga photons (raƙuman haske) zuwa electrons da makamashin haske zuwa makamashin lantarki don samar da wutar lantarki.da kuma tsari na yanzu.Gilashin siliki da aka samar a cikin mahaɗin da ke sama ba zai iya gudanar da wutar lantarki ba, kuma ƙwayoyin hasken rana da aka sarrafa sun ƙayyade ƙarfin samar da wutar lantarki na kayan aikin hoto.
(2) Rarraba:Dangane da nau'in substrate, ana iya raba sel zuwa nau'i biyu:Kwayoyin nau'in P da nau'in nau'in N.Doping boron a cikin lu'ulu'u na silicon na iya yin semiconductor na nau'in P;doping phosphorus na iya yin N-type semiconductor.Danyen kayan baturi na nau'in P shine nau'in siliki na P-type (doped tare da boron), kuma albarkatun batirin nau'in N-type silicon wafer (doped tare da phosphorus).Kwayoyin nau'in nau'in P sun haɗa da BSF (kwayoyin filayen baya na al'ada na al'ada) da PERC (waɗanda ke wucewa da tantanin baya);Kwayoyin N-nau'in a halin yanzu mafi yawan fasahar zamani suneTOPCon(tunneling oxide Layer passivation lamba lamba) da HJT (na ciki na bakin ciki film Hetero junction).Batir mai nau'in N yana gudanar da wutar lantarki ta hanyar electrons, kuma raguwar hasken da ke haifar da atom ɗin boron-oxygen ba ya da yawa, don haka ingancin canjin hoto ya fi girma.
3. Gabatarwar batirin PERC
(1) Bayani: Cikakken sunan baturin PERC shine "emitter and back passivation baturi", wanda aka samo asali daga tsarin AL-BSF na baturi na baya na aluminum na al'ada.Daga mahangar tsarin, su biyun suna da kamanceceniya, kuma baturin PERC kawai yana da Layer passivation na baya fiye da baturin BSF (fasahar baturi na ƙarni na baya).Samar da tari na wucewa ta baya yana ba da damar tantanin halitta na PERC don rage saurin sake haɗuwa da farfajiyar baya yayin da inganta hasken hasken baya da haɓaka ingantaccen juzu'i na tantanin halitta.
(2) Tarihin ci gaba: Tun daga 2015, batir na PERC na gida sun shiga wani mataki na saurin girma.A cikin 2015, ƙarfin samar da batirin PERC na cikin gida ya kai matsayi na farko a duniya, wanda ya kai kashi 35% na ƙarfin samar da batir na PERC na duniya.A cikin 2016, shirin "Photovoltaic Top Runner Program" wanda Hukumar Kula da Makamashi ta Kasa ta aiwatar ya jagoranci fara aikin samar da yawan masana'antu na PERC a kasar Sin, tare da matsakaicin inganci na 20.5%.2017 shine juzu'i ga rabon kasuwa naKwayoyin photovoltaic.Kasuwar kasuwa na sel na al'ada sun fara raguwa.Kasuwar tantanin halitta ta cikin gida ta PERC ta karu zuwa 15%, kuma karfin samar da ita ya karu zuwa 28.9GW;
Tun daga 2018, batir na PERC sun zama babban al'ada a kasuwa.A cikin 2019, babban yawan samar da sel na PERC zai haɓaka, tare da ingantaccen samar da yawan jama'a na 22.3%, yana lissafin sama da 50% na ƙarfin samarwa, bisa hukuma ya zarce sel BSF don zama mafi kyawun fasahar hotovoltaic tantanin halitta.Bisa kididdigar CPIA, ta hanyar 2022, yawan yawan samar da kwayoyin PERC zai kai 23.3%, kuma ikon samar da kayan aiki zai kai fiye da 80%, kuma kasuwar kasuwa za ta fara matsayi na farko.
4. TOPCon baturi
(1) Bayani:TOPCon baturi, wato, tunneling oxide Layer passivation contact cell, an shirya a bayan baturin tare da ultra-bakin ciki tunneling oxide Layer da Layer na sosai doped polysilicon bakin ciki Layer, wanda tare samar da passivation lamba tsarin.A cikin 2013, Cibiyar Fraunhofer a Jamus ta gabatar da shi.Idan aka kwatanta da sel na PERC, ɗayan shine a yi amfani da nau'in silicon a matsayin ma'auni.Idan aka kwatanta da nau'in siliki na nau'in p, nau'in silicon na nau'in n-nau'in yana da tsawon rayuwa mai ɗaukar nauyi, ingantaccen juzu'i, da haske mai rauni.Na biyu shi ne shirya wani passivation Layer ( matsananci-bakin ciki silicon oxide SiO2 da kuma doped poly silicon thin Layer Poly-Si) a baya don samar da lamba passivation tsarin cewa gaba daya ware yankin doped daga karfe, wanda zai iya kara rage baya baya. farfajiya.Yiwuwar sake haɗuwa da ƴan tsirarun mai ɗaukar kaya tsakanin saman da ƙarfe yana inganta ƙarfin jujjuyawar baturi.
Lokacin aikawa: Agusta-29-2023